Volume 39, Number 3, July I 1997
|Page(s)||287 - 292|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
Intermittent diffusion on the reconstructed Si(111) surface
Department of Physics and Division of Engineering and
Harvard University, Cambridge, MA 02138, USA
Accepted: 22 June 1997
The diffusion of an extra-adatom on reconstructed Si(111) surfaces is investigated using density-functional total-energy pseudopotential calculations. The diffusion path is characterized by a basin of attraction in which the extra-adatom is localized until an intermittent jump to a nearby basin of attraction occurs. The energy barrier between the neighboring basins is 1.12 eV, while the energy barrier within a basin is 0.56 eV. Our theoretical predictions for stable and activated configurations provide a natural explanation for the scanning tunneling microscopy images of an extra silicon atom on the Si(111)- surface, which is radically different from the simple models proposed in the literature.
PACS: 68.35.Fx – Diffusion; interface formation / 66.30.Dn – Theory of diffusion and ionic conduction in solids / 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy
© EDP Sciences, 1997
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