| Issue |
Europhys. Lett.
Volume 40, Number 6, December II 1997
|
|
|---|---|---|
| Page(s) | 661 - 666 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1997-00540-7 | |
| Published online | 01 September 2002 | |
Susceptibility of local magnetic moments in phosphorus-doped silicon near the metal-insulator transition
Physikalisches Institut, Universität Karlsruhe,
D-76128 Karlsruhe, Germany
Received:
20
August
1997
Accepted:
3
November
1997
We report on a systematic investigation of the paramagnetic susceptibility
of local moments in crystalline P-doped silicon in a wide
concentration range encompassing the metal-insulator transition (MIT) for
temperatures between 
and 
. The Bhatt-Lee model
of a hierarchy of antiferromagnetically coupled spin-pairs allows a consistent
description of the thermodynamic properties far on the insulating side
of the MIT as shown by
comparison of and specific heat measured on nearly
identical samples, but fails on the metallic side, where presumably
the Kondo effect is operative. Our data put strong constraints on the theory
of localized moments on the metallic side of the MIT.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 71.55.Cn – Elemental semiconductors / 75.20.Hr – Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions
© EDP Sciences, 1997
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.