This article has an erratum: [https://doi.org/10.1209/epl/i1998-00196-9]
Volume 40, Number 6, December II 1997
|661 - 666
|Condensed matter: electronic structure, electrical, magnetic and optical properties
|01 September 2002
Susceptibility of local magnetic moments in phosphorus-doped silicon near the metal-insulator transition
Physikalisches Institut, Universität Karlsruhe,
D-76128 Karlsruhe, Germany
Accepted: 3 November 1997
We report on a systematic investigation of the paramagnetic susceptibility of local moments in crystalline P-doped silicon in a wide concentration range encompassing the metal-insulator transition (MIT) for temperatures between and . The Bhatt-Lee model of a hierarchy of antiferromagnetically coupled spin-pairs allows a consistent description of the thermodynamic properties far on the insulating side of the MIT as shown by comparison of and specific heat measured on nearly identical samples, but fails on the metallic side, where presumably the Kondo effect is operative. Our data put strong constraints on the theory of localized moments on the metallic side of the MIT.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 71.55.Cn – Elemental semiconductors / 75.20.Hr – Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions
© EDP Sciences, 1997
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