Volume 65, Number 1, January 2004
|Page(s)||75 - 81|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 December 2003|
Anti-localisation to strong localisation: The interplay of magnetic scattering and structural disorder
Harish-Chandra Research Institute - Chhatnag Road, Jhusi, Allahabad 211 019, India
Accepted: 26 October 2003
We study the effect of magnetic scattering on transport in a system with strong structural disorder, using exact finite-size calculation of the low-frequency optical conductivity. At weak electron-spin coupling, spin disorder leads to a decrease in resistivity, by weakening the quantum interference precursors to Anderson localisation. However, at strong electron-spin coupling, the “double exchange” limit, magnetic scattering increases the effective disorder, sharply increasing the resistivity. We illustrate the several unusual transport regimes in this strong-disorder problem, identify a re-entrant insulator-metal-insulator transition, and map out the phase diagram at a generic electron density.
PACS: 72.10.Bg – General formulation of transport theory / 72.15.Qm – Scattering mechanisms and Kondo effect / 72.15.Rn – Localization effects (Anderson or weak localization)
© EDP Sciences, 2004
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