Reduction of transient regime in fast preionized high-power pulsed-magnetron discharge

P. Vašina; M. Meško; M. Ganciu; J. Bretagne; C. Boisse-Laporte; L. de Poucques; M. Touzeau

doi:10.1209/epl/i2005-10243-7

All issues

Volume 72 / No 3 (November 2005)

Europhys. Lett., 72 3 (2005) 390-395

Abstract

Issue		Europhys. Lett. Volume 72, Number 3, November 2005


Page(s)		390 - 395
Section		Physics of gases, plasmas and electric discharges
DOI		https://doi.org/10.1209/epl/i2005-10243-7
Published online		28 September 2005

Europhys. Lett., 72 (3), pp. 390-395 (2005)

Reduction of transient regime in fast preionized high-power pulsed-magnetron discharge

P. Vašina¹^,2, M. Meško¹^,2, M. Ganciu¹^,3, J. Bretagne¹, C. Boisse-Laporte¹, L. de Poucques¹ and M. Touzeau¹

¹ Laboratoire de Physique des Gaz et des Plasmas, Bat. 210, Université Paris-Sud 91405, Orsay Cedex, France
² Department of Physical Electronics, Faculty of Science, Masaryk University Kotlarská 2, 61137, Brno, Czech Republic
³ National Institute of Laser, Plasma and Radiation Physics MG 36, Magurele, Bucharest, Romania

Corresponding authors: petr.vasina@pgp.u-psud.fr mihai.ganciu@pgp.u-psud.fr

Received: 25 July 2005
Accepted: 5 September 2005

Abstract

A high-power pulsed-magnetron discharge (several $\un{kW/cm^2}$ ) is described. It operates at pulse duration of the order of few μs, significantly shorter than in usual similar devices. The breakdown delay was reduced by using a low-current DC preionization. The study was performed for Cu target in Ar and He buffer gases by optical emission spectroscopy and electrical measurements. Saturation magnetron current is reached in a few μs which permits to shorten the pulse duration avoiding arc formation. Unusual high current density up to $10\un{A/{cm^2}}$ induces very fast transition toward the stable self-sputtering regime. High plasma density favours high ion flux to the substrate. Preliminary result on Cu deposit in trenches is reported.

PACS: 51.50.+v – Electrical properties (ionization, breakdown, electron and ion mobility, etc.) / 52.50.Dg – Plasma sources / 52.77.-j – Plasma application

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