Volume 76, Number 1, October 2006
|Page(s)||95 - 101|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||23 August 2006|
Gate voltage effects in capacitively coupled quantum dots
Oxford University, Physical and Theoretical Chemistry Laboratory South Parks Road, Oxford OX1 3QZ, UK
Accepted: 1 August 2006
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and poor man's scaling techniques, the low-energy Kondo scale of the model is shown to vary significantly with the gate voltage, being exponentially small when spin and pseudospin degrees of freedom dominate; but increasing to much larger values when the gate voltage is tuned close to the edges of the Coulomb blockade staircase where low-energy charge-fluctuations also enter, leading thereby to correlated electron physics on energy/temperature scales more accessible to experiment. This range of behaviour is also shown to be manifest strongly in single-particle dynamics and electron transport through each dot.
PACS: 71.27.+a – Strongly correlated electron systems; heavy fermions / 72.15.Qm – Scattering mechanisms and Kondo effect / 73.63.Kv – Quantum dots
© EDP Sciences, 2006
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