Volume 76, Number 1, October 2006
|Page(s)||88 - 94|
|Section||Condensed matter: structural, mechanical and thermal properties|
|Published online||06 September 2006|
Temperature-dependent fatigue rate in ferroelectric thin films
Nano-Surface Technology Research Lab, Korea Basic Science Institute Busan 609-735, Korea
2 Department of Physics, Pusan National University - Busan 609-735, Korea
3 School of Nano-Science and Technology, Pusan National University Busan 609-735, Korea
4 Department of Nanomedical Engineering and PNU-Fraunhofer IGB Joint Research Center, Pusan National University - Miryang 627-706, Korea
Accepted: 1 August 2006
Bismuth-layer–structured ferroelectric (BLSF) thin films with a composition of were prepared by an acetic-acid–based sol-gel route. The ferroelectric, dielectric, and fatigue characteristics of the films over a wide temperature range from 300 to 100 were analyzed by using a computerized measurement system. The fatigue characteristic of the film was improved with decreasing temperature. This behavior is attributed to the temperature-dependent changes of domain movement (or freezing), diffusivity (or mobility) of charged defects, and their interactions. It was found that the onset of fatigue ( ) and the fatigue rate ( ) were temperature-dependent parameters. The activation energy of the fatigue rate in sol-gel–derived BLT films was about 1.07, which coincides with that of oxygen vacancies in perovskite-type materials. We suggest that the fatigue mechanism in the BLT system is mainly due to the behavior (or movement) of oxygen vacancies.
PACS: 68.60.Dv – Thermal stability; thermal effects / 77.55.+f – Dielectric thin films / 77.80.-e – Ferroelectricity and antiferroelectricity
© EDP Sciences, 2006
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