Issue |
Europhys. Lett.
Volume 76, Number 1, October 2006
|
|
---|---|---|
Page(s) | 88 - 94 | |
Section | Condensed matter: structural, mechanical and thermal properties | |
DOI | https://doi.org/10.1209/epl/i2005-10604-2 | |
Published online | 06 September 2006 |
Temperature-dependent fatigue rate in ferroelectric
thin films
1
Nano-Surface Technology Research Lab, Korea Basic Science Institute Busan 609-735, Korea
2
Department of Physics, Pusan National University - Busan 609-735, Korea
3
School of Nano-Science and Technology, Pusan National University Busan 609-735, Korea
4
Department of Nanomedical Engineering and PNU-Fraunhofer IGB Joint Research Center, Pusan National University - Miryang 627-706, Korea
Corresponding authors: jaeyeol@gmail.com crcho@pusan.ac.kr
Received:
5
December
2005
Accepted:
1
August
2006
Bismuth-layer–structured ferroelectric (BLSF) thin films with a
composition of were prepared
by an acetic-acid–based sol-gel route. The ferroelectric,
dielectric, and fatigue characteristics of the films over a wide
temperature range from 300
to 100
were analyzed by using
a computerized measurement system. The fatigue characteristic of the
film was improved with decreasing temperature. This behavior is
attributed to the temperature-dependent changes of domain movement
(or freezing), diffusivity (or mobility) of charged defects, and
their interactions. It was found that the onset of fatigue
(
) and the fatigue rate (
)
were temperature-dependent parameters. The activation energy of the
fatigue rate in sol-gel–derived BLT films was about 1.07
,
which coincides with that of oxygen vacancies in perovskite-type
materials. We suggest that the fatigue mechanism in the BLT system is mainly due to the behavior (or movement) of oxygen vacancies.
PACS: 68.60.Dv – Thermal stability; thermal effects / 77.55.+f – Dielectric thin films / 77.80.-e – Ferroelectricity and antiferroelectricity
© EDP Sciences, 2006
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