Volume 79, Number 5, September 2007
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||30 July 2007|
A theoretical study on the transport property of the p-n heterojunction
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academic of Sciences - Beijing 100080, China
Corresponding author: email@example.com
Accepted: 6 July 2007
The transport property of the heterostructure was investigated theoretically by applying the drift-diffusion model to the present system. A simple scenario of the semiconductor band and electric field at the interface region of the heterostructure with various bias voltages are presented. The good agreement between the self-consistent calculated results and the experimental data indicates that the proposed band picture is valid for the interpretation of the transport property of the p-n heterojunctions made of and Si regardless of the complexity of the interface structures and multi-couplings among charge, spin, lattice and orbital of manganites.
PACS: 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 72.20.Dp – General theory, scattering mechanisms / 75.47.Lx – Manganites
© Europhysics Letters Association, 2007
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