Transport property in p-n junctionQing-li Zhou, Kui-juan Jin, Hui-bin Lu, Peng Han, Zheng-hao Chen, Kun Zhao, Yue-liang Zhou and Guo-zhen Yang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Science - P.O. Box 603, Beijing 100080, PRC
received 18 March 2005; accepted in final form 26 May 2005
published online 17 June 2005
The transport properties of a homogenous perovskite oxide p-n junction composed of the p-type -doped and n-type -doped have been studied by solving one-dimensional steady-state carrier-transport equations based on the drift-diffusion model. The energy band profile, electric-field intensity, and charge density are obtained for the space charge region at various bias voltages. Furthermore, the rectifying characteristics of the I-V curves are calculated and analyzed as a function of doping density. The theoretical results are in good agreement with the experimental data, and more details in the understanding of transport mechanism for oxide p-n junctions have been gained.
73.40.Lq - Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.
77.84.Dy - Niobates, titanates, tantalates, PZT ceramics, etc.
72.20.Dp - General theory, scattering mechanisms.
© EDP Sciences 2005