Volume 87, Number 5, September 2009
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||22 September 2009|
Backward diode behavior in oxygen-excessive manganite-titanate p-n junction
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University 066004, Qinhuangdao, PRC
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100080, PRC
Corresponding author: firstname.lastname@example.org
Accepted: 26 August 2009
Junctions composed of La0.9Ca0.1MnO3 film and 1 wt% Nb-doped SrTiO3 substrate were fabricated using pulsed-laser deposition technique. Several junctions were annealed in O2 flow at 900 °C for 10 hours. Studies on the current-voltage characteristics of these junctions showed that the annealed junctions exhibit strong backward diode behavior that takes place for small bias (within ± 1.05 V) and gradually vanishes with increasing temperature up to 50 K. As a comparison, no backward diode behavior was observed in the unannealed junctions. The depression of leakage current is believed to be responsible for the backward diode behavior in the present junctions.
PACS: 75.47.Lx – Manganites / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 75.70.Cn – Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
© EPLA, 2009
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