| Issue |
EPL
Volume 90, Number 3, May 2010
|
|
|---|---|---|
| Article Number | 37004 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/90/37004 | |
| Published online | 01 June 2010 | |
Direct observation of excitonic polaron in InAs/GaAs quantum dots
1
Key Laboratory of Quantum Information, University of Science and Technology of China, CAS Hefei, 230026, PRC
2
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, CAS P.O. Box 912, Beijing 100083, PRC
Corresponding authors: helx@ustc.edu.cn cfli@ustc.edu.cn
Received:
22
December
2009
Accepted:
3
May
2010
We report a direct observation of excitonic polaron in InAs/GaAs quantum dots using the photoluminescence (PL) spectroscopy. We observe that a new peak s' emerges below the s-shell which has anomalous temperature dependence emission energy. The peak s' anticrosses with s at a certain temperature, with a large anticrossing gap up to 31 meV. The behavior of the new peak, which cannot be interpreted using Huang-Rhys model, provides a direct evidence for strong coupling between exciton and LO phonons, and the formation of the excitonic polaron. The strong coupling between exciton and phonons opens a way to coherently control the polaron states.
PACS: 71.38.-k – Polarons and electron-phonon interactions / 71.35.-y – Excitons and related phenomena / 78.67.Hc – Quantum dots
© EPLA, 2010
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