Volume 96, Number 1, October 2011
|Number of page(s)||6|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||14 September 2011|
Temperature and structure size dependence of the thermal conductivity of porous silicon
Max Planck Institute of Microstructure Physics - Weinberg 2, 06120 Halle, Germany, EU
2 Institute for Material Science, University of Kiel - Kaiserstr. 2, 24143 Kiel, Germany, EU
Accepted: 9 August 2011
In order to assess the potential of porous Si as thermoelectric material we have performed thermal conductivity measurements in dependence of both temperature and average structure size. Investigations on samples with average structure sizes between 7 nm and 100 nm reveal a pronounced reduction in thermal conductivity which is encouraging for the future use of porous Si as thermoelectric material. The observed dependence on structure size and temperature can be explained in terms of a simple kinetic model based on the reduction of the effective phonon mean free path.
PACS: 66.70.Df – Metals, alloys, and semiconductors / 44.30.+v – Heat flow in porous media / 72.20.Pa – Thermoelectric and thermomagnetic effects
© EPLA, 2011
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