Volume 96, Number 1, October 2011
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||22 September 2011|
Grain boundary resistivities of polycrystalline Au films
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science Beijing 100080, China
2 Center for Nanophase Materials Sciences, Oak Ridge National Laboratory - Oak Ridge, TN 37831-6493, USA
3 Computer Science and Mathematics Division, Oak Ridge National Laboratory - Oak Ridge, TN 37831-6493, USA
Accepted: 22 August 2011
The grain boundary resistivities of polycrystalline Au films are determined without any adjustable parameters by comparing the changes in residual resistivity and average grain size before and after annealing. Surface roughness contribution to the total residual resistivity, which scales with the average grain size differently than the grain boundary contribution, is found to be negligible. The measured resistivity data yield a grain boundary reflection coefficient R that is dependent on the film thickness and varies from 0.28 to 0.4.
PACS: 73.50.-h – Electronic transport phenomena in thin films / 73.63.-b – Electronic transport in nanoscale materials and structures
© EPLA, 2011
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.