Volume 98, Number 1, April 2012
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 April 2012|
Insulator-to-metal transition and large thermoelectric effect in La1−xSrxMnAsO
Department of Physics, Zhejiang University - Hangzhou 310027, China
2 State Key Lab of Silicon Materials, Zhejiang University - Hangzhou 310027, China
Accepted: 7 March 2012
We report the effect of Sr substitution in an antiferromagnetic insulator LaMnAsO by the measurements of electrical resistivity, Hall coefficient, Seebeck coefficient and magnetization. Upon Sr doping to its limit x∼0.10, the room temperature resistivity drops by five orders of magnitude down to ∼0.01Ω·cm, and the temperature-dependent resistivity shows essentially metallic behavior. Hall and Seebeck measurements confirm consistently that the insulator-to-metal transition is due to hole doping. The room temperature Seebeck coefficient for the metallic samples is as high as ∼240 μ V/K, making the system a possible candidate for thermoelectric applications.
PACS: 71.30.+h – Metal-insulator transitions and other electronic transitions / 72.15.Jf – Thermoelectric and thermomagnetic effects / 72.80.Ga – Transition-metal compounds
© EPLA, 2012
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