| Issue |
EPL
Volume 107, Number 3, August 2014
|
|
|---|---|---|
| Article Number | 37003 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/107/37003 | |
| Published online | 30 July 2014 | |
Compensation of the exciton-ion exchange interaction in a quantum dot by application of a magnetic field
1 Institute of Experimental Physics, Faculty of Physics, University of Warsaw - Hoża 69, Warsaw, Poland
2 Institute of Physics, Polish Academy of Sciences - Lotników 32/46, Warsaw, Poland
Received: 10 July 2014
Accepted: 17 July 2014
The exchange interaction between band carriers and electrons from the d-shell of a single magnetic ion embedded in a semiconductor quantum dot leads to the splitting of exciton-ion states which allows to optically read the ion spin state. The influence of this interaction on ion states can be described in terms of an effective magnetic field induced by the exciton. It means that the 
exchange interaction can be partially compensated by the application of a magnetic field along the growth axis. We study this effect for CdTe/ZnTe quantum dots with a single Mn2+ ion. The in-plane component added to the perpendicular magnetic field induces mixing of different ion spin states, resulting in multiple anticrossings of the excitonic photoluminescence lines of the dot. This enables detailed investigation of the compensation.
PACS: 78.55.Et – II-VI semiconductors / 78.67.Hc – Quantum dots
© EPLA, 2014
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