Volume 110, Number 2, April 2015
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||30 April 2015|
Evidence of the side jump mechanism in the anomalous Hall effect in paramagnets
State Key Laboratory of Surface Physics and Department of Physics, Fudan University Shanghai 200433, China and Collaborative Innovation Center of Advanced Microstructures - Shanghai 200433, China
Received: 29 December 2014
Accepted: 7 April 2015
Persistent confusion has existed between the intrinsic (Berry curvature) and the side jump mechanisms of anomalous Hall effect (AHE) in ferromagnets. We provide unambiguous identification of the side jump mechanism, in addition to the skew scattering contribution in epitaxial paramagnetic Ni34Cu66 thin films, in which the intrinsic contribution is by definition excluded. Furthermore, the temperature dependence of the AHE further reveals that the side jump mechanism is dominated by the elastic scattering.
PACS: 72.15.Eb – Electrical and thermal conduction in crystalline metals and alloys / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) / 75.47.Np – Metals and alloys
© EPLA, 2015
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