Volume 110, Number 3, May 2015
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||14 May 2015|
Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer
1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences Hefei 230031, PRC
2 High Magnetic Field Laboratory, Chinese Academy of Sciences - Hefei 230031, PRC
3 Collaborative Innovation Center of Advanced Microstructures, Nanjing University - Nanjing, 210093, PRC
Received: 2 January 2015
Accepted: 21 April 2015
The electronic structures of the WTe2 bulk and layers are investigated by using the first-principles calculations. The perfect electron-hole charge compensation and high carrier mobilities are found in the WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment (Ali M. N. et al, Nature, 514 (2014) 205). The monolayer and bilayer of WTe2 preserve the semimetallic property, with equal hole and electron carrier concentrations. Moreover, very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices.
PACS: 73.22.-f – Electronic structure of nanoscale materials and related systems / 73.50.-h – Electronic transport phenomena in thin films / 75.47.-m – Magnetotransport phenomena; materials for magnetotransport
© EPLA, 2015
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