Volume 114, Number 5, June 2016
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||07 July 2016|
Scaling of the anomalous Hall effect in lower conductivity regimes
1 Department of Materials Science and Engineering, University of California - Berkeley, CA 94720, USA
2 Materials Science Division, Lawrence Berkeley National Lab - Berkeley, CA 94720, USA
3 Physics Department, University of California - Berkeley, CA 94720, USA
4 Groupe de Physique des Matériaux, UMR CNRS 6634, Université de Rouen - 76801 St. Etienne du Rouvray, France
Received: 28 January 2016
Accepted: 12 June 2016
The scaling of the anomalous Hall effect (AHE) was investigated using amorphous and epitaxial FexSi1−x (0.43 < x < 0.71) magnetic thin films by varying the longitudinal conductivity using two different approaches: modifying the carrier mean free path with chemical or structural disorder while holding the carrier concentration constant or varying nh and keeping l constant. The anomalous Hall conductivity , when suitably normalized by magnetization and nh, is shown to be independent of for all samples. This observation suggests a primary dependence on an intrinsic mechanism, unsurprising for the epitaxial high conductivity films where the Berry phase curvature mechanism is expected, but remarkable for the amorphous samples. That the amorphous samples show this scaling indicates a local atomic level description of a Berry phase, resulting in an intrinsic AHE in a system that lacks lattice periodicity.
PACS: 73.50.-h – Electronic transport phenomena in thin films / 73.61.Jc – Amorphous semiconductors; glasses / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
© EPLA, 2016
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