Interfacial-scattering–induced enhancement of the anomalous Hall effect in uniform Fe nanocluster-assembled films

¹ Fujian Key Laboratory of Advanced Materials, Collaborative Innovation Center of Chemistry for Energy Materials, and Department of Materials Science and Engineering, College of Materials, Xiamen University Xiamen 361005, PRC
² Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University - Tianjin 300072, PRC

^(a) miwenbo@tju.edu.cn
^(b) dlpeng@xmu.edu.cn

Received: 28 September 2014
Accepted: 23 December 2014

Abstract

We report on the cluster size $(d)$ dependence of the anomalous Hall effect (AHE) in uniform Fe nanocluster-assembled films prepared by the plasma-gas-condensation method. In particular, a large enhancement of the AHE is observed at $d=4.3\ \text{nm}$ , which is almost four orders of magnitude larger than bulk Fe. The saturated anomalous Hall resistivity $(\rho_{xy}^{\text{A}})$ shows a sharp decrease as d increases from 4.3 to 10.1 nm and a slight decrease with further increasing d to 16.1 nm. Moreover, in double-logarithmic scales, $\rho_{xy}^{\text{A}}$ decreases with the increase of longitudinal resistivity $(\rho_{xx})$ , obeying a new scaling relation of $\log(\rho_{xy}^{\text{A}}/\rho_{xx})=a_{0}+b_{0}\log\rho_{xx}$ , which originates from the interfacial scattering to the AHE and longitudinal resistivity.