Volume 115, Number 2, July 2016
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||30 August 2016|
The stability of tin silicon oxide thin-film transistors with different annealing temperatures
Department of Materials Science, Fudan University - Shanghai 200433, PRC
Received: 30 March 2016
Accepted: 3 August 2016
The influence of annealing temperature on the electrical properties of tin silicon oxide (TSO) thin-film transistors (TFTs) and the corresponding bias stress stability have been investigated. With increasing annealing temperature, the TSO films present a structure which is closer to crystallization, and it is conducive to the improvement of the mobility of TSO TFTs. Meanwhile, the positive bias stress (PBS) stability of TSO TFTs is ameliorated due to the decreasing traps at the interface of dielectric layer and channel layer. The threshold voltage shifts in opposite direction after being stressed under negative bias stress (NBS), which is due to the competition between electrons captured by defects related to oxygen vacancies in the channel layer and water molecule adsorption on the back channel.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 81.15.Cd – Deposition by sputtering / 81.40.Ef – Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
© EPLA, 2016
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