Volume 122, Number 5, June 2018
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||17 July 2018|
Tunneling current in magnetic-ferroelectric-superconducting heterostructures
1 CSIR-National Physical Laboratory - Dr. K. S. Krishnan Marg, New Delhi 110012, India
2 Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus - Dr. K. S. Krishnan Road, New Delhi 110012, India
3 Department of Physics, and Institute for Functional Nanomaterials, University of Puerto Rico San Juan, PR 00931-3343, USA
Received: 13 April 2018
Accepted: 13 June 2018
We report the tunneling current behavior of magnetic-ferroelectric-superconducting heterostructures for multistates non-volatile random access memory (NVRAM) elements. A heterostructure of La0.67Sr0.33MnO3 (LSMO) (50 nm)/PbZr0.52Ti0.48O3 (PZT) (5 nm)/Bi-Sr-Ca-Cu2-OX (BSCCO) (100 nm)/LaAlO3 (LAO) architecture was fabricated by pulsed laser deposition technique. The tunneling effects were investigated well above and below the superconducting phase transition temperature of the BSCCO bottom electrode. A divergent current and conductance paths were observed for polarization up and down direction above the coercive field of the ferroelectric tunnel barrier. This behaviour was significant below Ts where the moderate effect of the external magnetic field was also observed on the tunneling current. The dynamic conductance G(V) data fitted well with Brinkman's model for both polarizations up and polarization down states which suggest the presence of large tunnel electro-resistance.
PACS: 74.25.-q – Properties of superconductors / 77.80.-e – Ferroelectricity and antiferroelectricity / 85.25.Hv – Superconducting logic elements and memory devices; microelectronic circuits
© EPLA, 2018
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