Volume 129, Number 6, March 2020
|Number of page(s)||7|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 April 2020|
Superconductivity in Se-doped La2O2Bi2Pb2S6-xSexwith a Bi2Pb2Ch4-type thick conducting layer
Department of Physics, Tokyo Metropolitan University - 1-1, Minami-osawa, 192-0397 Hachioji, Japan
Received: 13 February 2020
Accepted: 9 April 2020
La2O2Bi2Pb2S6 is a layered Bi-based oxychalcogenide with a thick four-layer–type conducting layer. Although La2O2Bi2Pb2S6 is a structural analogue of La2O2Bi3AgS6, which is a superconductor, insulating behavior has been observed in La2O2Bi2Pb2S6 at low temperatures, and no superconductivity has been reported. Herein, we demonstrate superconductivity in La2O2Bi2Pb2S6-xSex via partial substitution of Se in the S sites. Owing to the Se doping, the normal state electrical resistivity of La2O2Bi2Pb2S6-xSex at low temperatures was dramatically suppressed, and superconductivity was observed at a transition temperature () of 1.2 K for . increased with increasing Se concentration: for . By applying high pressure for , bulk superconductivity was confirmed and the increased up to 3.6 K at 0.89 GPa.
PACS: 74.70.-b – Superconducting materials other than cuprates / 74.62.Dh – Effects of crystal defects, doping and substitution / 74.25.F- – Transport properties
© EPLA, 2020
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