| Issue |
EPL
Volume 131, Number 6, September 2020
|
|
|---|---|---|
| Article Number | 67002 | |
| Number of page(s) | 7 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/131/67002 | |
| Published online | 02 November 2020 | |
Top-gate zinc-tin-oxide thin-film transistors based on organic gate insulator
1 School of Materials Science and Engineering, Special and Key Laboratory of Guizhou Provincial Higher Education for Photoelectric information Analysis and Processing, Guizhou Minzu University Guiyang 550025, PRC
2 China ZhenHua Group YongGuang Electronics Co., Ltd. - Guiyang 550018, PRC
(a) lyue10@fudan.edu.cn (corresponding author)
Received: 5 April 2020
Accepted: 30 August 2020
The thin-film transistors (TFTs) using the pulsed-plasma-deposition–prepared amorphous Zn-Sn-O (a-ZTO) as active layer and the dip-coated polymethylmethacrylate (PMMA) as gate insulator were fabricated. The results display that the PMMA film shows anti-reflection phenomenon when the PMMA layer combines with the ZTO layer to form a double-layer configuration. Moreover, the oxygen vacancy existing in ZTO decreased with the increase of the substrate heating. Compared to the reference a-ZTO TFTs with a channel prepared at RT and subsequently annealing at 
, a markedly improved performance was evidenced for TFT via treatment of heating in the process of preparation ( in O2 ambient). The optimum a-ZTO TFTs, operating in an enhancement mode, showed a high mobility of 
and an on/off ratio over 105.
PACS: 73.61.Jc – Amorphous semiconductors; glasses / 85.30.De – Semiconductor-device characterization, design, and modeling / 85.30.Tv – Field effect devices
© 2020 EPLA
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