A theoretical study on the transport property of the p-n heterojunctionJie Qiu, Kui-juan Jin, Peng Han, Hui-bin Lu, Chun-lian Hu, Bao-ping Wang and Guo-zhen Yang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academic of Sciences - Beijing 100080, China
received 8 June 2007; accepted in final form 6 July 2007; published September 2007
published online 30 July 2007
The transport property of the heterostructure was investigated theoretically by applying the drift-diffusion model to the present system. A simple scenario of the semiconductor band and electric field at the interface region of the heterostructure with various bias voltages are presented. The good agreement between the self-consistent calculated results and the experimental data indicates that the proposed band picture is valid for the interpretation of the transport property of the p-n heterojunctions made of and Si regardless of the complexity of the interface structures and multi-couplings among charge, spin, lattice and orbital of manganites.
73.40.Lq - Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.
72.20.Dp - General theory, scattering mechanisms.
75.47.Lx - Manganites.
© Europhysics Letters Association 2007