Low-field colossal magnetoresistance in manganite tunnel spin valves

M. Viret; M. Drouet; J. Nassar; J. P. Contour; C. Fermon; A. Fert

doi:10.1209/epl/i1997-00391-2

All issues

Volume 39 / No 5 (September I 1997)

Europhys. Lett., 39 5 (1997) 545-550

Abstract

Issue		Europhys. Lett. Volume 39, Number 5, September I 1997


Page(s)		545 - 550
Section		Condensed matter: electronic structure, electrical, magnetic and optical properties
DOI		https://doi.org/10.1209/epl/i1997-00391-2
Published online		01 September 2002

Europhys. Lett., 39 (5), pp. 545-550 (1997)

Low-field colossal magnetoresistance in manganite tunnel spin valves

M. Viret¹, M. Drouet², J. Nassar², J. P. Contour², C. Fermon¹ and A. Fert²

¹ CEA Saclay, Service de physique de l'état condensé, 91191 Gif-sur-Yvette, France
² UMR CNRS/Thomson-CSF, LCR, domaine de Corbeville, 91404 Orsay Cedex, France

Received: 21 May 1997
Accepted: 10 July 1997

Abstract

We report on the magnetoresistive properties of all-oxide tunnel spin valves in which electrodes of mixed valence manganites $\rm (La_{0.7}Sr_{0.3}MnO_{3})$ are separated by a thin insulating layer. The structures were prepared by Pulsed Laser Deposition and several tunnel barriers were used including $\rm PrBa_2(CuGa)_3O_7$ , $\rm CeO_2$ and $\rm SrTiO_3$ . The latter gives the largest magnetoresistive effect where the trilayer's resistance is increased by a factor of 5.5 at 50 Gauss and 4.2 K. Analysis of the temperature variation of the barrier resistivity shows that the dramatic loss of the magnetoresistive effect above 150 K is due to a reduced oxygen content of the interface between $\rm La_{0.7}Sr_{0.3}MnO_3$ and $\rm SrTiO_3$ . Solving this problem should lead to similar results at room temperature.

PACS: 72.15.Gd – Galvanomagnetic and other magnetotransport effects / 75.30.Kz – Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.) / 73.40.Rw – Metal-insulator-metal structures

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