Volume 39, Number 5, September I 1997
|Page(s)||545 - 550|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Low-field colossal magnetoresistance in manganite tunnel spin valves
CEA Saclay, Service de physique de l'état condensé, 91191 Gif-sur-Yvette,
2 UMR CNRS/Thomson-CSF, LCR, domaine de Corbeville, 91404 Orsay Cedex, France
Accepted: 10 July 1997
We report on the magnetoresistive properties of all-oxide tunnel spin valves in which electrodes of mixed valence manganites are separated by a thin insulating layer. The structures were prepared by Pulsed Laser Deposition and several tunnel barriers were used including , and . The latter gives the largest magnetoresistive effect where the trilayer's resistance is increased by a factor of 5.5 at 50 Gauss and 4.2 K. Analysis of the temperature variation of the barrier resistivity shows that the dramatic loss of the magnetoresistive effect above 150 K is due to a reduced oxygen content of the interface between and . Solving this problem should lead to similar results at room temperature.
PACS: 72.15.Gd – Galvanomagnetic and other magnetotransport effects / 75.30.Kz – Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.) / 73.40.Rw – Metal-insulator-metal structures
© EDP Sciences, 1997
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.