Volume 61, Number 4, February 2003
|Page(s)||499 - 505|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 February 2003|
Hot-hole effects in a dilute two-dimensional gas in
DSM/Service de Physique de l'Etat Condensé,
CEA-Saclay 91191 Gif-sur-Yvette Cedex, France
2 Laboratory of Solid State Physics, ETH Zürich - CH-8093 Zürich, Switzerland
3 Laboratoire de Photonique et de Nanostructures, CNRS - 91460 Marcoussis, France
4 Paul Scherrer Institut - CH-5232 Villigen PSI, Switzerland
Accepted: 10 December 2002
We study the resistivity vs. electric-field dependence of a dilute two-dimensional hole (h) system in , on both sides of the crossover from weak to strong localization at B=0. Using ρ as a “thermometer” to obtain the effective temperature of the holes , we find that can be attributed to hole heating. In spite of the strong localization and h-h interactions, the power loss does not indicate any deviation from the density and temperature dependences predicted assuming independent and delocalized electrons. The consequences of these results on the h-h interaction assisted hopping, glassy behaviour and E-field scaling are developed. The hole-phonon coupling involves a limited screening, a deformation potential compatible with measurements at larger densities and temperatures, and a piezoelectric component which is definitely probed.
PACS: 63.20.Kr – Phonon-electron and phonon-phonon interactions / 73.20.Fz – Weak or Anderson localization / 71.27.+a – Strongly correlated electron systems; heavy fermions
© EDP Sciences, 2003
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