Volume 71, Number 2, July 2005
|Page(s)||283 - 289|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||17 June 2005|
Transport property in p-n junction
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Science - P.O. Box 603, Beijing 100080, PRC
Corresponding author: firstname.lastname@example.org
Accepted: 26 May 2005
The transport properties of a homogenous perovskite oxide p-n junction composed of the p-type -doped and n-type -doped have been studied by solving one-dimensional steady-state carrier-transport equations based on the drift-diffusion model. The energy band profile, electric-field intensity, and charge density are obtained for the space charge region at various bias voltages. Furthermore, the rectifying characteristics of the I-V curves are calculated and analyzed as a function of doping density. The theoretical results are in good agreement with the experimental data, and more details in the understanding of transport mechanism for oxide p-n junctions have been gained.
PACS: 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 77.84.Dy – Niobates, titanates, tantalates, PZT ceramics, etc / 72.20.Dp – General theory, scattering mechanisms
© EDP Sciences, 2005
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