| Issue |
Europhys. Lett.
Volume 71, Number 2, July 2005
|
|
|---|---|---|
| Page(s) | 283 - 289 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2005-10084-4 | |
| Published online | 17 June 2005 | |
Transport property in 
p-n junction
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Science - P.O. Box 603, Beijing 100080, PRC
Corresponding author: kjjin@aphy.iphy.ac.cn
Received:
18
March
2005
Accepted:
26
May
2005
The transport properties of a homogenous perovskite oxide p-n
junction composed of the p-type 
-doped
and n-type 
-doped
have been studied by solving one-dimensional steady-state
carrier-transport equations based on the drift-diffusion model.
The energy band profile, electric-field intensity, and charge
density are obtained for the space charge region at various bias
voltages. Furthermore, the rectifying characteristics of the
I-V curves are calculated and analyzed as a function of
doping density. The theoretical results are in good agreement
with the experimental data, and more details in the understanding
of transport mechanism for oxide p-n junctions have been
gained.
PACS: 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 77.84.Dy – Niobates, titanates, tantalates, PZT ceramics, etc / 72.20.Dp – General theory, scattering mechanisms
© EDP Sciences, 2005
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