Volume 93, Number 4, February 2011
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||28 February 2011|
Reversible in situ modulation of competing phases in manganite/ferroelectrics heterostructures
Department of Physics, The University of Hong Kong - Pokfulam Road, Hong Kong
Accepted: 27 January 2011
Manganite/ferroelectrics heterostructures were formed by growing a La0.8Ca0.2MnO3 film on single crystal of ferroelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT). In such heterostructures, the lattice strain can be well controlled by the electric field applied to PMN-PT. Thus the properties of the La0.8Ca0.2MnO3 layer become tunable. Significant modulations on both insulator-metal (I-M) phase transition and resistivity (∼15%) were achieved under a field of 8 kV/cm. The compression of the manganite lattice in the (a,b)-plane resulted in a lower resistance and higher I-M transition temperature, demonstrating an enhanced ferromagnetic-metallic phase. Such a modulation of competing phases was ascribed to the distortion of the MnO6 octahedron.
PACS: 73.50.Dn – Low-field transport and mobility; piezoresistance / 75.47.Gk – Colossal magnetoresistance / 77.65.-j – Piezoelectricity and electromechanical effects
© EPLA, 2011
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